RFMW Introduces 400-Micron Discrete FET from TriQuint Semiconductor

TriQuint TGF2040 400-micron FETRFMW, Ltd. announces design and sales support for TriQuint Semiconductor TGF2040, a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25um pHEMT process, power and efficiency at high drain bias operating conditions are optimized. The TriQuint TGF2040 supports circuit designs to 20GHz with up to 26dBm P1dB, gain up to 13dB and 55% power-added efficiency (PAE). The TGF2040 is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Power supply requirements are reduced which is particularly useful in airborne applications such as UAVs. Along with hi-rel defense and aerospace, additional applications include test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required. The TriQuint TGF2040 is available in DIE with a silicon nitride, protective overcoat layer providing a level of environmental robustness and scratch protection. The TGF2040 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
Part 12 GHz DC Gate Die Size
Vds = 8V, Ids = 50% Idss Vds =
2V
P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth
TGF2018 22 14 55 1 58 70 -1.0 -15 -15 88 0.25×180 410×340
TGF2025 24 14 58 0.9 81 97 -1.0 -15 -15 62.5 0.25×180 410×340
TGF2040 26 13 55 1.1 129 155 -1.0 -15 -15 60 0.25×400 410×340
TGF2060 28 12 55 1.4 194 232 -1.0 -15 -15 54 0.25×600 410×340
TGF2080 * 30 11.5 60 259 310 -1.0 -15 -15 45 0.25×800 410×540
TGF2120 * 32 11 60 388 464 -1.0 -15 -15 38 0.25×1200 410×540
TGF2160 * 33 10.5 63 517 619 -1.0 -15 -15 32 0.25×1600 410×340
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