RFMW Introduces 600-Micron Discrete FET from TriQuint Semiconductor


TriQuint TGF2060 600-micron FET
RFMW, Ltd. announces design and sales support for a discrete 600-Micron GaAs pHEMT FET. The  TGF2060 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.34 x 0.10mm chip suitable for eutectic die attach, the  TGF2060 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint  TGF2060 provides 28dBm P1dB with 12dB associated gain and power added efficiency (PAE) of 55%. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required. The  TGF2060 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
Part 12 GHz DC Gate Die Size
Vds = 8V, Ids = 50% Idss Vds =
2V
P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth
TGF2018 22 14 55 1 58 70 -1.0 -15 -15 88 0.25×180 410×340
TGF2025 24 14 58 0.9 81 97 -1.0 -15 -15 62.5 0.25×180 410×340
TGF2040 26 13 55 1.1 129 155 -1.0 -15 -15 60 0.25×400 410×340
TGF2060 28 12 55 1.4 194 232 -1.0 -15 -15 54 0.25×600 410×340
TGF2080 * 30 11.5 60 259 310 -1.0 -15 -15 45 0.25×800 410×540
TGF2120 * 32 11 60 388 464 -1.0 -15 -15 38 0.25×1200 410×540
TGF2160 * 33 10.5 63 517 619 -1.0 -15 -15 32 0.25×1600 410×340
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