RFMW Introduces 800-Micron Discrete FET from TriQuint Semiconductor

TriQuint 800 micron Discrete FETRFMW, Ltd. announces design and sales support for a discrete 800-Micron GaAs pHEMT FET. The TGF2080 from TriQuint Semiconductor is constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach, the TGF2080 was designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions. The TriQuint TGF2080 provides 29.5dBm P1dB with 11.5dB associated gain and power added efficiency (PAE) of 56%. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers where high efficiency and linearity are required. The TGF2080 is part of a family of high-efficiency pHEMT power FETs providing a broad selection of output powers.
Part 12 GHz DC Gate Die Size
Vds = 8V, Ids = 50% Idss Vds =
2V
P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth
TGF2018 22 14 55 1 58 70 -1.0 -15 -15 88 0.25×180 410×340
TGF2025 24 14 58 0.9 81 97 -1.0 -15 -15 62.5 0.25×180 410×340
TGF2040 26 13 55 1.1 129 155 -1.0 -15 -15 60 0.25×400 410×340
TGF2060 28 12 55 1.4 194 232 -1.0 -15 -15 54 0.25×600 410×340
TGF2080 30 11.5 60 259 310 -1.0 -15 -15 45 0.25×800 410×540
TGF2120 * 32 11 60 388 464 -1.0 -15 -15 38 0.25×1200 410×540
TGF2160 * 33 10.5 63 517 619 -1.0 -15 -15 32 0.25×1600 410×340
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