RFMW, Ltd. announces design and sales support for IXYS RF model IXRFD631, a high-current CMOS gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXYS RF IXRFD631 employs a Kelvin ground connection on the input allowing the use of a common mode choke to avoid ground bounce problems. Capable of sinking 30 amps of peak current, the IXRFD631 can produce voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The driver input is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. Low quiescent current and a wide operating voltage range make the IXYS RF IXRFD631 ideal for applications such as pulse generators, pulse laser diode drivers and switch mode supplies where the low inductance RF package minimizes stray lead inductances for optimum switching performance.