RFMW Introduces Discrete 1600-Micron FET from TriQuint Semiconductor

TriQuint TGF2160 FET
RFMW, Ltd. announces design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the  TGF2160 offers 63% PAE at 8V and 517mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. A
silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. The TriQuint TGF2160 is available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach.
Part 12 GHz DC Gate Die Size
Vds = 8V, Ids = 50% Idss Vds =
2V
P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth
TGF2018 22 14 55 1 58 70 -1.0 -15 -15 88 0.25×180 410×340
TGF2025 24 14 58 0.9 81 97 -1.0 -15 -15 62.5 0.25×180 410×340
TGF2040 26 13 55 1.1 129 155 -1.0 -15 -15 60 0.25×400 410×340
TGF2060 28 12 55 1.4 194 232 -1.0 -15 -15 54 0.25×600 410×340
TGF2080 29.5 11.5 56 259 310 -1.0 -15 -15 33 0.25×800 410×540
TGF2120 31 11 57 388 464 -1.0 -15 -15 31 0.25×1200 410×540

TGF2160
32.5 10.4 63 517 619 -1.0 -15 -15 31 0.25×1600 410×340
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