X-band GaN Transistor from RFMW provides 5 Watts

Qorvo TGF2977-SM provides 5W of saturated power from 8 to 12GHzRFMW, Ltd. announces design and sales support for a plastic GaN transistor from Qorvo. The TGF2977-SM provides 5W of saturated power from 8 to 12GHz for various applications including marine and weather radar, military radar and avionics. Operational to very low frequency, the recommended bias voltage is 32V. The TGF2977-SM provides >50% PAE and small signal gain of >13dB at mid X-band frequencies. Offered in a low cost, low thermal resistance, plastic, QFN package measuring 3x3mm, this transistor is capable of supporting CW and pulse operation.

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