90 Watt Transistor offers High Efficiency and High Gain

RFMW announces design and sales support for a high gain, GaN transistor with excellent efficiency. The Qorvo QPD0060 spans DC to 2.7 GHz with 90 Watts of P3dB output power and maximum drain efficiency of 74.7%. Linear gain is 19.5 dB and efficiency-tuned P3dB gain is 21.5 dB. Designed for 48 V operation, the QPD0060 serves wireless infrastructure, active antenna systems, military & commercial radar, land mobile and military radio communications and test instrumentation. Functional as either a driver or final stage it’s both CW and pulse capable. Offered in a plastic overmold, SMT package.

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