RFMW Introduces 30W, 6GHz GaN Transistor from TriQuint Semiconductor

TriQuint T1G6003028-FL 30W GaN Transistor

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s T1G6003028-FL, DC – 6GHz GaN transistor offering 30W P3dB at 6GHz and up to 40W P3dB midband. Gain at P3dB is >11dB requiring half the power from a driver stage compared to some competitors. Linear gain is >14dB. The T1G6003028-FL uses a 28V supply and only 200mA of current. Overall efficiency is up to 60%. The –FL flange package offers low thermal resistance and is easily bolted down. Also available from TriQuint / RFMW is an earless package in the T1G6003028-FS. Both TriQuint transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required. Bothe the T1G6003028-FL and T1G6003028-FS are available from stock at RFMW, Ltd.

T1G6003028-FL: Flanged Package, 30W, 28V, DC-6GHz GaN RF Power Transistor
T1G6003028-FS: Earless Package, 30W, 28V, DC-6GHz GaN RF Power Transistor

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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