5W GaN Transistor from RFMW Supports 5GHz ISM
Posted On 17 Mar 2015
RFMW, Ltd. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. The TriQuint (Qorvo) TGF3020-SM provides 5.7W P3dB at 5.4GHz. The transistor can be tuned for power, gain and efficiency. Linear gain is 12dB. Packaged as a 3×3 plastic QFN, the TGF3020-SM is capable of pulsed and CW operation. With wideband performance from 4 to 6GHz, additional applications include telemetry, C-band radar, and instrumentation. Power added efficiency (PAE) at P3dB measures 53%. The TGF3020-SM operates from a 32V supply.