RFMW, Ltd. announces design and sales support for a highly rugged, N-channel, enhancement-mode, LDMOS transistor from NXP Semiconductors. The MRF085H provides 85 watts of power for various applications from 1.8 to 1.215GHz. With unmatched input and output ports, the MRF085H offers narrow-band and wide-band performance. Highly rugged, the device is designed for use in high VSWR industrial, scientific and medical applications and sub-GHz aerospace and defense and mobile radio applications. Suitable for linear applications such as radio transmitters, the device can be used single-ended or in a push-pull configuration and is characterized from 30 to 50V for ease of use.