What made you select the Qorvo UJ4SC075005L8S 5.4 mohm 750V Gen 4 SiC FET as a product to feature? How does this product differentiate from others and what value does it offer?
Qorvo’s UJ4SC075005L8S 5.4 mohm 750V Gen 4 SiC FET provides ultra-low Rds(on) and unmatched performance across the main figures of merit (FOM) for on-resistance and output capacitance. The 750V rating offers enhanced voltage transient margin over similar 600 – 650V rated devices. Additionally, the new TOLL (TO-Leadless) package offers a Kelvin-source connection for high-speed switching and smaller footprint than D2PAK surface-mount packages. Advanced manufacturing techniques including sintered die attach results in an industry-leading junction to case thermal resistance of 0.1 °C/W.
What are the key features and specifications of the UJ4SC075005L8S?
Qorvo’s UJ4SC075005L8S Gen 4 SiC FET features:
- 750V
- Rds(on) = 5.4 mΩ
- RꝊjc = 0.1 °C/W
- Vgs = +15V/0V, (max) +/- 20V
- Vg(th) = 4.8V
- Sintered die attach
- New TOLL (TO-Leadless) Package
- Kelvin-source connection
- 588A pulsed current rating
- Tjmax=175°C
3. What are common markets and applications?
Typical applications for the UJ4SC075005L8S include:
- Solid-State Relays and Circuit Breakers
- PFC/AFE
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies (SMPS)
- Motor Drives
- Induction Heating
About Kirk Barton
Kirk Barton is a Technical Marketing Manager for Power Products at RFMW. Leveraging 35 years of industry experience and a degree in Electrical Engineering, Kirk specializes in high power applications using wide bandgap technologies. Kirk enjoys being part of the RF industry’s innovative environment and witnessing the positive impact that technological advances have on integration, efficiency, and end applications.
