RFMW Ltd., announces design and sales support for a new line of microwave absorbing materials from MAST Technologies. These “Tuned Frequency” absorbers are electrically optimized for specific applications and intended for customers who experience high frequency cavity resonance effects or high frequency EMI emissions above 18GHz. Proper application of the absorber eliminates these unwanted signals. This durable elastomeric material is flexible and will not crack, even in outdoor environments. Halogen free and RoHS compliant, the material is electrically non-conductive and can be placed in direct contact with electronic circuits. MAST model number MR11-0039-00 is tuned for absorption at 30GHz. The…
Author: RFMW
RFMW Ltd., announces design and sales support for a new line of microwave absorbing materials from MAST Technologies. These “Tuned Frequency” absorbers are electrically optimized for specific applications and intended for customers who experience high frequency cavity resonance effects or high frequency EMI emissions above 18GHz. Proper application of the absorber eliminates these unwanted signals. This durable elastomeric material is flexible and will not crack, even in outdoor environments. Halogen free and RoHS compliant, the material is electrically non-conductive and can be placed in direct contact with electronic circuits. MAST model number MR11-0041-00 is tuned for absorption at 24GHz. The…
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2025 provides 24dBm typical output power at P1dB with gain of 14dB and 58% power-added efficiency. This performance makes the TGF2025 appropriate for high efficiency applications in hi-rel circuits and broadband commercial or military subsystems. Available as DIE, the TGF2025 has a protective overcoat layer with silicon nitride providing environmental robustness and scratch protection for hybrid…
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2018, a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using TriQuint’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and…
RFMW , Ltd. announces design and sales support for a new line of microwave absorbing materials from MAST Technologies. These “Tuned Frequency” absorbers are electrically optimized for specific applications and intended for customers who experience high frequency cavity resonance effects or high frequency EMI emissions above 18GHz. Proper application of the absorber eliminates these unwanted signals. This durable elastomeric material is flexible and will not crack, even in outdoor environments. Halogen free and RoHS compliant, the material is electrically non-conductive and can be placed in direct contact with electronic circuits. MAST model number MR11-0031-00 is tuned for absorption at 20.6GHz.…
RFMW , Ltd. announces design and sales support for the RFPA2026, 700 to 2700MHz, 2W power amplifier module from RFMD. The RFPA2026 is a 3-stage module with independent bias control for each stage plus the ability to bypass the first stage to reduce gain and power consumption. With all stages active, the RFPA2026 provides 38dB of gain at 2140MHz with a corresponding P1dB of 33dBm. External matching and bias control allows the RFPA2026 to be optimized for various applications including small-cell power amplifiers and ultra-linear driver amplifiers. A power down capability decreases power consumption and improves system sensitivity. The RFPA2026 operates with a…
NXP’s next generation RF transistors offer industry leading RF noise figure versus gain performance while drawing the lowest current. This performance allows for better signal reception at low power and enables robust operation for RF receivers in noisy environments. 7th generation transistors are designed for 2.8V battery operated applications, where power consumption is important. Select NXP Wideband Transistors are available for sampling.
RFMW, Ltd. announces design and sales support for 6GHz broadband wireless filters from Sangshin Elecom. The MBP33RC6162S525A is an excellent choice for wireless backhaul applications where flexibility in channel planning and selection is critical. The MBP33RC6162S525A from Sangshin Elecom covers the frequency range from 5.9GHz to 6.425GHz in a small 8.5mm x 5.6mm package. The MBP33RC6162S525A exhibits insertion loss of 2.0dB, 25dB of rejection at 5.5GHz and return loss of 12dB while operating from -40deg C to +85deg C. A complimentary filter, the MBP33RC5212S525A covers the frequency band of 4950 to 5475 MHz and offers comparable performance to the MBP33RC6162S525A.…
RFMW, Ltd. announces design and sales support for Sangshin Elecom ceramic monoblock filters targeting Digital Pre-Distortion (DPD) applications where anti-aliasing filters are required to improve system performance. Sangshin offers a complete line of filters with bandwidths of 400MHz, 360MHz, and 300MHz in all popular cellular frequencies. The MBP56RC2N2590C400A has a center frequency of 2590MHz with a 400MHz band width and offers 30dB of rejection at 2290MHz. Bandpass insertion loss is only 3dB and the MBP56RC2N2590C400A can handle up to 1W CW of RF power. The MBP56RC2N2590C400A is housed in a compact 30mm x 8mm x 6mm package. This Sangshin DPD…
RFMW announces sales and support for Skyworks new 0.03 to 0.3 GHz low-noise, low-current amplifier. The SKY67015-396LF is a GaAs, pHEMT LNA with active bias and on-die stability structures enabling simple external matching. The SKY67015-396LF offers the ability to externally adjust supply current between 5 – 20 mA. Noise Figure of 0.80 dB, 17.5 dB Gain and 25 dBm OIP3 are achievable at 0.25 GHz with a 3.3V supply and 18 mA of bias current. The Skyworks SKY67015-396LF can also be biased from 1.8 to 5V and will still achieve an OIP3 of 16 dBm, and 12 dBm OP1dB with…