In this interview from IMS 2025, RFMW’s Tim Daly speaks with Rob Smith of CML Micro about two newly released RF power amplifier products: the CMX90A007 (2W driver amplifier) and CMX90A009 (10W output stage). Designed for 136 MHz to 1 GHz operation, these GaAs HBT amplifiers are optimized for 7.4V systems, making them ideal for battery-powered, handheld applications such as two-way radios and private mobile radio systems. The discussion also highlights the SµRF product line, CML Micro’s portfolio of standard compound semiconductor solutions, which includes GaAs HBT, pHEMT, and GaN technologies spanning sub-GHz to 50 GHz.
Product Highlights:
CMX90A007: 2W Driver Amplifier
The CMX90A007 is a high gain two-stage GaAs HBT driver amplifier in a plastic QFN package, delivering +33.5 dBm (2.2 W) of output power with greater than 55 % efficiency at 435 MHz and 7.4 V.
CMX90A009: 10W Power Amplifier
The CMX90A009 is a high efficiency two-stage GaAs HBT driver amplifier in a thermally enhanced plastic DFN package, delivering +40.0 dBm (10W) of output power with greater than 60 % efficiency at 435 MHz and 7.4 V.
