RFMW announces design and sales support for a high-power transistor from Ampleon. The ART2K0PEG LDMOS power transistor provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz frequency band. Offering 28.5 dB of gain and drain efficiency of 73%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 volts VDS while the ART2K0PEG is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor. This “gull-wing”, SMT transistor is capable of withstanding load mismatches corresponding to a VSWR of 65:1. Additional uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems in the Aerospace industry.

RFMW announces design and sales support for a high linearity gain block from Qorvo. The QPA9127 supports 5G mMIMO and wireless infrastructure with an operational bandwidth of 1 to 6 GHz. Offering a P1dB of 20 dBm, gain is equal to 20 dB and OIP3 measures 35 dBm. Internally matched to 50 ohms, the QPA9127 draws 70 mA from a single 5V supply with DC shutdown control. Offered in a 2x2mm, SMT package.

RFMW announces design and sales support for a high power, SMT RF limiter. The RFuW Engineering model number RFLM-052402QC-290, silicon, PIN-Diode limiter module offers both high power CW and peak power protection in frequency ranges from 50 MHz to 4 GHz. Capable of handling average power up to 200 Watts (53 dBm) and pulsed peak power up to 2000 Watts (63 dBm at pulse width = 25 usec, duty cycle = 5%), the RFLM-052402QC-290 maintains low flat leakage to less than 17 dBm, and reduces spike leakage to less than 0.5 ergs. Maximum recovery time is 1.5 uSec. The combination of high peak power handling and fast recovery time is mandatory for mission-critical applications. RF performance is exceptional with insertion loss < 0.5 dB. This quasi-active limiter offers “Always On” high power CW and peak protection in a compact, low profile 8mm x 5mm x 2.5mm package.

RFMW announces design and sales support for a wide bandwidth, distributed amplifier from Qorvo (Custom MMIC). The CMD284P4, GaAs MMIC distributed amplifier is housed in a leadless, 4×4 mm plastic surface mount package for ease of installation. Operating from DC to 22 GHz and delivering 17 dB of gain, the device offers 19 dBm P1dB and noise figure of 2.5 dB at 10 GHz. Matched to 50 ohms, the CMD284P4 eliminates the need for external RF port matching.

RFMW announces design and sales support for a high frequency, GaN on SiC, power amplifier from Qorvo. Serving X-band radar and EW applications from 10 to 12 GHz, the Qorvo QPM1021 amplifier offers 100 Watts of saturated output power with large signal gain of 20 dB. Power added efficiency (PAE) is >32% for this 28V device drawing 2 amps of current. The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.