1. What made you select the Sangshin Elecom MBP86RC3550S500B? How does this product differentiate from others/what value does it offer?

The small form factor and high-power capabilities of Sangshin Elecom’s MBP86RC3550S500B make it an ideal component for global deployments of 5G gnodeBs.

2. What are the key features/specifications of the MBP86RC3550S500B?

This monoblock ceramic filter features 15 Watts CW input power, 500 MHz passband with low insertion loss (1 dB), and a 0.5 dB ripple. Additionally, Sangshin filters can be designed for customer-specific applications including passband center frequency, bandwidth, and out-of-band attenuation.

3. What are common/typical markets and applications of the MBP86RC3550S500B?

The MBP86RC3550S500B is designed for peak-to-average power requirements of LTE signals, 3.5 GHz band, and is suitable as a roofing filter for global deployments of 5G gnodeB base stations.

About Colin Field

Colin Field is an RFMW Supplier Manager responsible for passive components with a particular focus on RF Filters and antenna solutions. Beginning his career in 1984, Colin has a passion for physics which has led to a lifelong interest in materials technology, properties and the potential uses and applications of those materials.

If you have spent any time using coaxial cable assemblies, you know that there is an endless multitude of options. There are many reasons why laboratory-grade cable assemblies and the cables used on a VNA are larger, more stable, and more reliable than a commodity RG-type cable. Developers should consider materials, temperature ranges, and mechanical design when selecting an ideal coaxial cable assembly.

While the materials and platings employed in cable assemblies are important, the dielectric of a cable assembly will be the most significant indication of performance. Designed to be the structural medium through which a signal travels, the dielectric is typically a light-weight polymer whose composition determines how efficiently a signal will propagate.

In seeking higher propagation velocity, a low-loss or low-attenuation cable assembly should include as much empty space as possible because electromagnetic waves travel fastest through a vacuum. However, a greater inclusion of air and micro-voids can inhibit the structural rigidity of a cable assembly. Electrical performance of a soft dielectric can become compromised when bent or flexed, or even when outer shields are added during manufacturing. In contrast, increasing rigidity for structural stability will also increase attenuation, decrease propagation velocity, and lengthen the mechanical phase.

The unifying principle in this scenario is density, which can be characterized in dielectrics by three factors:

1. Material used
2. Method used to form the dielectric
3. Localized density variation

Often overlooked or misunderstood, the third stage of defined dielectric density can severely impact a signal path in a highly sensitive and/or high-frequency system.

Unlike amorphous polymers whose molecule chains are randomly intertwined like a bowl of spaghetti–almost all polymers used as dielectrics are semicrystalline. Some of their long-chain molecules are bonded together in ordered, crystal-like folds and connected by the rest of the amorphous molecule chains. The crystalline portions provide mechanical strength and high heat resistance. The amorphous regions give dielectrics their flexibility and elasticity.

Semicrystalline polymers can have their electrical performance increased by lowering overall densities through foaming or sintering, however, they are all susceptible to the common performance threat of density variation. Changes in the density of these polymers can affect the dielectric constant enough that a phase-sensitive system will notice it. As signal frequencies increase, the effect will be amplified. Drift can be reduced by adding air to the dielectric, but it cannot eliminate the impact entirely.

Localized phase variation occurs if the dielectric’s density changes due to a bend in the cable. When solid materials are bent, stress compresses the material from the center to the inner diameter of the bend and strain elongates it from the center to the outer diameter. Stress and strain increases the local density of a dielectric enough so that the propagation is reduced and the mechanical phase length of the signal increases. If the radius of that bend is decreased even more, the mechanical phase and attenuation further increases due to the rise in local density.

One reason that coaxial cables have a minimum bend radius is to ensure that electrical performance is not diminished by local density changes. Another reason is that once a cable is bent beyond that minimum, the dielectric can be permanently deformed. This typically occurs when the outer shields and center conductor compress the material to the point that they cut or dent the dielectric. Cable assembly is rendered defective if the dielectric is cut or bent as the cable will permanently present a point of reflectance and amplitude distortions, along with a phase shift.

The integrity of the dielectric is maintained by armor. If standard coaxial cable assemblies are in protected enclosures or do not carry complex signals, they only require one to three shields to prevent RF leakage. Conversely, lab-grade and VNA cables require additional armor to maintain peak performance.

Lab-grade and VNA cable assembly armor is typically a combination of:

• An abrasion-resistant outer braid
• Polymer jacket
• Wire braid
• Helically wrapped metal for crush resistance

A coaxial cable lies beneath a cable’s armor. A standard coaxial cable is commonly constructed with a center conductor, a dielectric, two to three shields, and a polymer jacket. However, the dielectric in VNA cables is always a premium, high-velocity and low-density PTFE.

Armor is used to protect cable assemblies from potential damage, but also limits the bend radius of the base coaxial cable. Especially true of VNA cable assemblies, the numerous layers prevent the premium cable from being bent to the point where phase is noticeably impacted–long before the dielectric could be damaged. Additionally, the robust design of ruggedized ports and DUT connectors protects cable terminations from bending strain and ensures that the signal passing through the sensitive terminations retains integrity for repeatability.

If you would like to check out more information about the durability of test and VNA cable assemblies, browse RFMW’s portfolio of RF cable assemblies, or contact our Coaxial Components Product Manager, Dan Smoliga, at Dan.Smoliga@rfmw.com.

1. What made you select Smiths Interconnect TSX Series as a product to feature?

Smiths Interconnect’s new TSX Series of DC to 50 GHz Chip Attenuators push the boundaries of size, weight, and power in a cost-effective, easy-to-implement surface mount solution.

2. What are the key features and specifications of the TSX Series?

Available in 0604 package sizes with values from 1 – 10, 15, and 20 dB, the TSX Series enables excellent broadband RF performance to 50 GHz–meaning power handling is increased while reducing size.

3. What are the common markets and applications of the TSX Series?

Smiths Interconnect’s TSX Series addresses critical factors in applications surrounding satellite communications, radar, instrumentation, and 5G.

About Paul Timberlake

Paul Timberlake is a Supplier Business Manager at RFMW and holds a Higher National Diploma (HND) in RF and Electronic Engineering. With 25 years of industry experience, Paul enjoys the fast-paced and exciting challenges of technological advancements in RF.

NXP recently launched a new portfolio of discrete Gallium Nitride (GaN) transistors to expand 5G Massive MIMO coverage. The transistors enable easy deployment of 5G Massive MIMO in urban and suburban areas.

NXP’s proprietary RF GaN technology is manufactured in their new Chandler (Arizona) fab and available through RFMW, their specialist RF distributor. This launch provides a GaN portfolio covering the 5G cellular bands between 2.3 and 4.0GHz.

A key benefit is that NXP’s GaN technology has a low-memory effect designed to maximizse linearity and reduce Digital Pre-Distortion (DPD) complexity.

The portfolio covers 48V driver stages, allowing a single amplifier supply voltage for the lineup. Engineers can design high-efficiency power amplifiers with optimum power consumption, size, and weight for easier deployment.

Portfolio

The portfolio covers both driver and final stage discrete GaN transistors suitable for 10 Watt 32T32R and 5 Watt 64T64R Massive MIMO antennas. Most transistors share the same DFN 7 x 6.5 package.

Typical Lineup

A typical lineup for 2.6GHz is the A5G26S008N with 19dB of gain, driving the A5G26H110N for a 15 Watt average output power. This provides a cost-effective lineup for a 32T32R Massive MIMO 5G antenna.
 

 

Samples and Evaluation Boards

Samples of the 5G Discrete Massive MIMO transistors are available now from RFMW’s sample program for both 32T32R and 64T64R antenna designs. Reference circuit evaluation boards are also available to order for the following frequency bands:

Please contact your local RFMW field sales engineer or contact us here for further information.

About Tim Daniels

Tim Daniels is a Supplier Business Manager at RFMW specializing in transistor and MMIC technologies. With over 20 years of RF industry experience, Tim is a chartered engineer that holds a master’s degree in electronics innovation and a bachelor’s degree in electronics with communications. His expertise enables him to provide comprehensive design recommendations and technical support for RFMW’s customers. Tim enjoys working with engineers from around the globe and is eager to find innovative solutions to new challenges.

1. What made you select the Ampleon ART2K0 as a product to feature?

As the highest power, 2 Kilowatt flagship of Ampleon’s Advanced Rugged Technology series, the ART2K0 is ideal for many high-power industrial and broadcast designs for its ruggedness. These devices are the “Flux Capacitors” of the RF Power World!

2. What are the key features and specifications of the ART2K0?

Tested to 65:1 VSWR, Ampleon’s ART2K0 is suitable for rugged applications and can deliver up to 2KW of RF Power from HF to UHF.

3. What are the common markets and applications of the Ampleon ART2K0?

The ART2K0 is an ideal solution for all high-power RF from HF to UHF. Popular applications include industrial lasers and plasma generators. Additionally, the ART2K0 is a cost-effective, high power RF solution for HF communications amplifiers, FM radio broadcast, digital audio broadcast (DAB), and VHF television (DVB-T) transmitters. With a relatively low output capacitance, the ART2K0 also supports use in low UHF ranges for particle accelerator amplifiers.

About Tim Daniels

Tim Daniels is a Supplier Business Manager at RFMW specializing in transistor and MMIC technologies. With over 20 years of RF industry experience, Tim is a chartered engineer that holds a master’s degree in electronics innovation and a bachelor’s degree in electronics with communications. His expertise enables him to provide comprehensive design recommendations and technical support for RFMW’s customers. Tim enjoys working with engineers from around the globe and is eager to find innovative solutions to new challenges.