RFMW announces design and sales support for a power amplifier module from NXP. The A3M39TL039 is a 28 V, 50-ohm matched integrated Doherty LDMOS Multi-Chip Module covering the cellular infrastructure bands between 3700-3980 MHz. With a 47 dBm (50 W) peak power at 39% power added efficiency and a dual-stage gain of 27 dB, it comes in a compact 10 x 6 mm LGA over-molded plastic package.

RFMW announces design and sales support for a multiband Wi-Fi antenna solution from Cirocomm Corporation. The DCAH0S17 is a high efficiency antenna designed to cover both the traditional 2.4 GHz Wi-Fi band and the entire Wi-Fi 6 and 6E bands from UNII 1 to UNII 8. This corner mount monopole offers a compact, lightweight solution with uniform directivity and is highly cost effective. Cirocomm and RFMW offer a high level of support during design implementation of the DCAH0S17 with antenna optimization services to maximize performance based on customer specific PCB and packaging needs. Technical assistance is recommended at the earliest design stage to optimize antenna performance.

RFMW announces design and sales support for a dual path amplifier from Qorvo. The QPD0011 is an asymmetric, dual-path, discrete GaN on SiC HEMT in a DFN package operating from 3.4 to 3.6 GHz. With 15 dB of gain, this device can deliver an average power of 15 W in a Doherty configuration or a Psat of 50 dBm at 3.5 GHz. Operating from a 48V bias, the QPD0011 has applications in 5G massive MIMO, microcell and small cell base stations.

RFMW announces design and sales support for Smiths Interconnect TSX Series chip attenuators with extended frequency range. The TSX series chip attenuators span DC to 50 GHz with 1 to 3 Watts of input power handling capability based on individual device attenuation values as follows: 0-1 dB attenuators are rated at 3 W, 2-3 dB rated at 2 W, 4-20 dB rated at 1 W. Q-band performance addresses new markets and applications including instrumentation, radar, satellite and 5G systems. In transmitters, low VSWR increases output power potential while the small, 0604 package size, ideal for pick and place manufacturing, reduces board space requirements.

RFMW announces design and sales support for a versatile, SiGe driver amplifier from NXP. The BTS6201U amplifier delivers high linearity with 27 dBm typical P1dB output power in its frequency range of 2300 to 4200 MHz. A dual-stage, single-ended design provides 31 dB of gain and is matched to 50 Ohms with integrated bias control, supporting fast switching for TDD systems. Class AB drain efficiency is 20% and signal bandwidth (IBW) is 200 MHz from this 5 V device. Typical applications are high-linearity pre-drivers in cellular infrastructures, such as bands B40, n41, B42, n77, n78 and C-band. Offered in a 3 x 3 mm QFN over-molded plastic package.