RFMW’s 200W GaN Transistor supports 3.5GHz Bandwidth

Ampleon CLF1G0035S-200P 200W GaN Transistor. DC to 3.5GHz w/11dB gain. 50VRFMW, Ltd. announces design and sales support for a 200W CW power transistor from Ampleon. The CLF1G0035S-200P GaN HEMT is usable from DC to 3.5GHz for broadband applications in wireless infrastructure, public mobile radios, jammers and Radar. The Ampleon CLF1G0035S-200P offers up to 11dB of associated gain in CW applications or 14dB of gain in pulsed applications. Operating from a 50V supply, the transistor draws only 300mA in class AB configurations with 44% typical efficiency. And, capable of withstanding mismatches up to VSWR = 10:1, the CLF1G0035S-200P shows the excellent ruggedness Ampleon is known for. Rise/fall time is 9nS. The CLF1G0035S-200P is offered in an earless Gemini package. A bolt-down version is offered as the CLF1G0035-200P.

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John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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