RFMW Pulsed Mini Switch for GaN Transistors

Part number 392P0000, 12 Amp pulsed switch from XSYSTOR, Inc. controls GaN TransistorsRFMW, Ltd. announces design and sales support for the 392P0000, 12 Amp pulsed switch from XSYSTOR, Inc. The 392P0000 MOS type switch is placed between the drain choke of the GaN transistor and power supply. It works with XSYSTOR 100 & 200 Series controllers to protect, operate, and modulate the GaN device. The unit is rated for drain voltages from 28 to 80V with very-low Rds ON. The I/O ports of this tiny switch are castellated for solder joints at 0.05” pitch, and the module can be placed in any direction of RF flow for easy integration of GaN amplifiers in high speed, pulsed power systems. Clock speed rise and fall times are as fast as <200nSec. Operating temperature is specified for -40 to 85 degrees C but will withstand 175 degrees C with derated voltage and current capacity.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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