LDMOS Amplifier Module supports Multi-Octave Bandwidth

Posted On 01 Mar 2022

Tag: Elite RF, MB030512M565028, modular amplifier

The Elite RF MB030512M565028 incorporates state-of-the-art LDMOS technology technology to deliver 350 Watts of saturated power from 30 to 512 MHz with a P1dB of 150 Watts

RFMW announces design and sales support for a high power amplifier module from Elite RF the MB030512M565028 incorporates advanced, state-of-the-art LDMOS technology to deliver 350 Watts of saturated power from 30 to 512 MHz. Biased class AB, the amplifier provides 52 dB of gain and works in CW or pulsed mode to support applications including Electronic Warfare (EW), commercial and military radios, jammers, scientific, and laboratory use. The MB030512M565028 can be used in narrowband and multi-octave bandwidth applications and comes with an industry leading 5-year warranty.

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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.