Advanced GaN on SiC Amplifier Module

The Elite RF MB.406.0G363228 incorporates advanced, GaN on SiC technology to deliver 4 Watts of saturated power from 400 to 6000 MHz with a P1dB of 2 Watts

RFMW announces design and sales support for a high power amplifier module from Elite RF. The MB.406.0G363228 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 4 Watts of saturated power from 400 to 6000 MHz with a P1dB of 2W. Biased class AB, the amplifier provides 32 dB of gain and works in CW or pulsed mode to support applications including EW, commercial and military radar, jammers, SATCOM, mobile infrastructure, scientific, medical and laboratory use. The MB.406.0G363228 can be used in narrowband and decade bandwidth applications and comes with an industry leading 5-year warranty.


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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

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