42 dB Gain Amplifier Module supports Decade Bandwidth

Posted On 03 May 2022

Tag: Elite RF, GaN on SiC module, MB.106.0G404050, modular amplifier

The Elite RF MB.106.0G404050 incorporates advanced, GaN on SiC technology to deliver 10 Watts of saturated power from 100 to 6000 MHz with a P1dB of 5 Watts

RFMW announces design and sales support for a high power amplifier module from Elite RF. The MB.106.0G404050 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 10 Watts of saturated power from 100 to 6000 MHz with a P1dB of 5W. Biased class AB, the amplifier provides 42 dB of gain and works in CW mode to support applications including EW, commercial and military radar, jammers, mobile infrastructure, scientific, medical and laboratory use. The MB.106.0G404050 can be used in multi-octave bandwidth applications and comes with an industry leading 5-year warranty.

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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.