RFMW’s Steven Darrow interviews Baljit Chandhoke of Microchip at the Knowledge is Power station during IMS2026 to discuss Microchip’s RF signal chain portfolio and GaN-on-SiC MMIC power amplifier solutions.
This interview includes an overview of Microchip’s RF signal chain approach, including GaN-on-SiC power amplifiers for the transmit path and low-noise amplifiers (LNAs) for the receive path. There are a wide variety of other devices in the Microchip RF solutions portfolio as well, including distributed amplifiers for signal conditioning, timing and clocking components for low phase noise PLLs, PIN diode limiters, and Schottky diodes.
Microchip’s GaN-on-SiC MMIC power amplifiers achieve high output power, efficiency, and linearity. Baljit highlights several devices covering frequencies from 6 to 31 GHz and output power levels from 5W to 70W. Applications for these RF power amplifiers, including satellite communications, aerospace and defense, test and measurement, and wireless infrastructure.
Products discussed include:
- ICP2637 MMIC Power Amplifier: A Ka-band GaN-on-SiC MMIC PA covering 23 to 31 GHz with 5W of output power, 25% PAE, and a compact 5 x 5 mm QFN package: https://www.rfmw.com/products/detail/icp2637-microchip/626135/
- ICP1040 MMIC Power Amplifier: An X-band GaN-on-SiC MMIC PA providing 12W of output power.
- ICP1048 MMIC Power Amplifier: An X-band GaN-on-SiC MMIC PA providing 70W of output power.
- ICP1240 MMIC Power Amplifier: A broadband GaN-on-SiC MMIC PA covering 6 to 18 GHz with 10W of output power.
