RFMW announces design and sales support for a high efficiency amplifier from Qorvo. The QPA9901 power amplifier supports small cells operating in the 2.11 to 2.17 GHz frequency range with up to 36 dBm P3dB and 36.5 dB of gain. DPD corrected ACPR is -48 dBc at +28 dBm output power. Drawing 93 mA from a 5 volt supply, the QPA9901 also supports DAS and mMIMO systems. Internally matched to 50 ohms at both input and output, it is offered in a 5×5 mm, SMT package.
Author: RFMW
RFMW announces design and sales support for a dual-path, GaN transistor. Qorvo’s QPD0305 contains two, 20 Watt transistors for 3.4 to 3.8 GHz massive MIMO microcell and macrocell base stations. Used as individual drivers or combined as a symmetric Doherty amplifier, each discrete GaN on SiC HEMT, single-stage power transistor provides 17.4 dB of gain. Housed in a low-cost, 7 x 6.5 mm plastic package the RF input is pre-matched for ease of use. The QPD0305 also supports active antenna designs.
RFMW announces design and sales support for the API Weinschel 4205A series of digital attenuators. Ideal for ATE systems in the 0.3 to 6000 MHz frequency range, the 4205A-95.5 offers 95.75 dB of attenuation in 0.25 dB steps. The attenuator can be controlled using parallel (TTL compatible), I2C, SPI, UART, or USB interfaces. MMIC technology offers repeatable performance for uninterrupted RF when changing attenuation values. With extremely fast attenuation switching and very fine attenuation step resolution, the 4205A-95.5 is ideal for ATE systems simulating RF fading for 2G/3G/4G LTE and 5G in MIMO, WiMAX and WiFi system designs.
RFMW announces design and sales support of SiTime’s Cascade™ family of MEMS clock ICs for 5G, wireline telecom and datacenter infrastructure. The SiT9514x, clock-system-on-a-chip (ClkSoC™) family, consists of Jitter Cleaners / Networking Synchronizers and Clock Generators that deliver multiple clock signals in a system using SiTime’s third-generation MEMS resonators to deliver higher performance with lower power. Communications and enterprise electronics have previously used clock ICs with external quartz references to integrate multiple timing functions and to distribute clock signals. SiTime’s new, all-silicon clock architecture integrates a MEMS resonator reference inside the package. More importantly, with SiTime’s proven MEMS…
RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0405 houses two transistors in a 7 x 6.5 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 4.4 to 5.0 GHz. Applicable for symmetric Doherty designs in 5G Massive MIMO BTS, it can deliver P3dB power of 21.9 Watts at +48 V operation. Device gain is 13.7 dB. The QPD0405 also supports active antennas and may be used as micro and macro, base station drivers.
RFMW announces availability of a white paper from Smiths Interconnect – “Fixture Preparation and RF Test of SMT Board Level Components at High Frequencies”. As the applications in modern telecommunications shift beyond 20 GHz, so does the need for RF components and systems at these frequencies. To properly support introduction of new technologies at frequencies of K-band, Ku-band and further towards millimeter wave, all aspects of component design and development must be considered including high frequency fixturing and probing and production testing.
RFMW announces design and sales support for a high-gain, two-stage RF amplifier. The Renesas F1490 offers two gain modes. In low gain mode, typical gain at 2600 MHz is 35.5 dB. In high gain mode, it’s 39.5 dB. Spanning a frequency range of 1.8 to 5.0 GHz the amplifier draws 75 mA from a 5 V supply for sub-6 GHz 5G applications. The devices’ high gain simplifies circuit design by eliminating a gain block function yet system flexibility is maintained via selectable gain control. Offered in a 3×3 mm QFN package.
RFMW announces design and sales support for a GaN RF power transistor. The Qorvo QPD0005 is an unmatched, single-stage transistor offering up to 8 Watts of output power in frequency bands from 2.5 to 5 GHz. Drain efficiency is >60% from a 48 V supply. Available in a 4.5 x 4 mm DFN package, the QPD0005 can be efficiency tuned to provide 18.8 dB of P3dB gain at 3.6 GHz. Applications include power amplifier drivers in mMIMO designs and Doherty drivers.
RFMW announces design and sales support for a surface mount, step-up switching transformer. The Frontier Electronics TSS1230F-01 exhibits excellent output voltage capability, low input voltage and low profile construction (3 mm). With a frequency range of 90 to 800 kHz, the transformer has an input voltage range from 1.5 to 6 VDC with an output voltage range of 15 to 300 VAC. Available with negative voltage, the transformer is shielded and has gold plated terminal pads. Output power is up to 1 Watt. The TSS1230F-01 is ideal for handheld and portable radios, mobile credit card processors, POS terminals, sensors,…
RFMW announces design and sales support for a low cost, dual transistor. The Qorvo QPD0210 offers two, high-performance transistors in a 7 x 6.5 mm, thermally enhanced package. The QPD0210 has an operating range of 1800 to 2700 MHz with a saturated output power of 16.6 Watts (42.2 dBm). Drain efficiency is 71.9% with linear gain of 18.8 dB. Developed for 5G massive MIMO base stations and active antennas, the device supports symmetric Doherty applications.