RFMW, Ltd. announces design and sales support for a WiFi 6 (802.11ax) front end module (FEM). The Qorvo QPF4200 optimizes the power amplifier for 5V operation while maintaining linear output power and leading-edge throughput. Integrating a 2.4 GHz power amplifier (PA), regulator, single-pole two-throw switch (SP2T), bypassable low noise amplifier (LNA), and power detector into a small 3 x 3 mm package, it also contains DIE level filtering for harmonics and 5 GHz rejection. Designed for access points, wireless routers, residential gateways and CPEs in the 2412 to 2484 MHz frequency range, the QPF4200 offers 33 dB of Tx gain…
Author: RFMW
RFMW, Ltd. announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Power Doubler RF amplifier IC. Qorvo’s model QPB8957 provides over 28 dB of flat gain and low noise of 4.5 dB for DOCSIS 3.1 amplifiers, head-end CMTS equipment and broadband CATV hybrid modules from 47 to 1218 MHz. Using a single 24V supply, the QPB8957 offers low noise and low distortion at high efficiency, consuming only 8.4W in a 5x7mm, QFN package. With CSO of -68 dBc and CTB of -75 dBc, this IC supports an adjustable bias and easy integration with a return loss of 18 dB.
RFMW, Ltd. announces design and sales support for the API Weinschel 984 series of electromechanical, programmable phase shifters. Model 984-1 offers 630 degrees of phase coverage with a 10-degree phase step. Operating from DC to 6 GHz, the phase shifter has an insertion loss of under 3.9 dB and can handle an input power of 30 dBm. Just over 4 inches in length, the 984-1 is equipped with SMA Female input/output connectors and offers optional TTL, parallel and I2C control interfaces. Applications include Automated Test Equipment (ATE) in engineering and production test lab environments for 2G/3G/4G LTE/5G, MIMO, WiMAX and…
RFMW, Ltd. announces design and sales support for a GaAs detector diode from Keysight Technologies. Available as a discrete, beam lead, the HSCH-9161 detector diode offers low junction capacitance of 0.035 pF and an fc >200 GHz making it ideal for medium-low barrier, zero bias detector circuits in 5G transceiver applications. Functional through W–band (110 GHz), the HSCH-9161 can be mounted in microstrip, finline, and coplanar circuits providing a small footprint in hybrid circuit designs. GaAs provides a lower temperature coefficient than silicon while maintaining durability. This Keysight detector diode has a maximum power handling capability of 20 dBm.
RFMW, Ltd. announces design and sales support for a high power, SMT RF limiter. The RFuW Engineering model number RFLM-262322HC-151 protects S-Band receivers from 2.6 to 3.2 GHz and is capable of handling 500 Watts of Peak Power (1 uSec pulse width and 5% duty cycle) while operating at +85 degrees C. Recovery time is <200nS. The combination of high peak power handling and ultra-fast recovery time is mandatory for missile defense radar systems. RF performance is exceptional with insertion loss of less than 0.8 dB. Features include average power handling of up to 46 dBm with a flat leakage…
RFMW, Ltd. announces design and sales support for API Technologies’ 351 single channel rotary joint. API rotary joints are used to transmit RF energy from a stationary RF source to a rotating RF line and find applications in military and commercial markets such as mobile satellite communication systems, radar systems including civil air traffic control, weather radars or anywhere rotational force might damage a transmission line. The 351 operates from DC to 40 GHz using 2.92mm coaxial connectors. VSWR is as low as 1.05:1. With power handling up to 500 watts peak or 50 watts average, this rotary joint is…
RFMW, Ltd. announces design and sales support for a Band 7 BAW duplexer filter. The Qorvo QPQ1270 supports Band 7 uplink and downlink applications in LTE dongles, small cells, base station infrastructure and repeater designs with uplink pass band frequencies from 2500 to 2570 MHz and downlink pass band frequencies from 2620 to 2690 MHz. BAW technology offers higher power handling, high rejection (>50 dB) at key frequencies and high isolation (>55 dB) while maintaining low insertion loss. The QPQ1270 requires no external matching and is rated over an operating range of -40 to 105 degrees Celsius. Housed in a…
RFMW, Ltd. announces design and sales support for a S/C-band, GaN, solid state power amplifier from Aethercomm. Model number SSPA 2.0-6.0-100 operates from 2 to 6 GHz and delivers a nominal output power of 100 Watts. The SSPA 2.0-6.0-100 can be blanked on and off in less than 10 uSec. Designed for high shock and vibration environments, it can be used on-board many different types of airborne platforms with input voltage of +18 to +32 Vdc. Typical small signal gain is 56-62 dB. Offered in a modular housing that is approximately 3.4″ (w) X 6.9″ (l) X 1.5″ (h), DC…
RFMW, Ltd. announces design and sales support for Qorvo’s QPC1217Q, a dual-pole double-throw (DPDT) transfer switch designed for general purpose switching applications between 700 to 6000 MHz where RF port transfer (port swapping) control is needed. The low insertion loss of 0.33 dB along with excellent linearity (77 dBm IIP3) makes the QPC1217Q ideal for multi-mode GSM, EDGE, UMTS, LTE, DSRC and Vehicle to ‘X’ (V2X) applications such as eCall switching. Tested in accordance with AEC-Q100 Grade 2, RF ports can be directly connected in 50 ohm systems and control logic is compatible with +1.3 V to +2.7 V systems.…
RFMW, Ltd. announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Power Doubler RF amplifier IC. Qorvo’s model QPB8857 provides over 28 dB of flat gain and low noise of 4.5 dB for DOCSIS 3.1 amplifiers, head-end CMTS equipment and broadband CATV hybrid modules from 47 to 1218 MHz. Using a single 24V supply, the QPB8857 offers low noise and low distortion at high efficiency, consuming only 10.5W in a 5x7mm, QFN package. With CSO of -68 dBc and CTB of -75 dBc, this IC supports an adjustable bias and easy integration with a return loss of 18 dB.