RFMW Introduces 35W GaN Transistor from TriQuint Semiconductor

TriQuint T1G4003532-FL GaN RF Power TransistorRFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FL, DC – 3.5GHz GaN transistor offering up to 37W P3dB. Gain at P3dB is >13dB requiring half the power from a driver stage compared to some competitors. Linear gain is >16dB. The T1G4003532-FL uses a 32V supply and only 150mA of current. Overall efficiency is >53%. The –FL flange package offers low thermal resistance and is easily bolted down. Also available is an earless package in the T1G4003532-FS. Both transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required. Both the T1G4003532-FL and T1G4003532-FS are available from stock at RFMW, Ltd.

: Flanged Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor
T1G4003532-FS: Earless Package, 35W, 32V, DC-3.5GHz GaN RF Power Transistor

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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