RFMW Introduces 35W GaN Transistor from TriQuint Semiconductor

TriQuint T1G4003532-FS 35W GaN Transistor

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s T1G4003532-FS, DC – 3.5GHz GaN transistor offering 35W P3dB at 3.5GHz and over 40W P3dB midband. Gain at P3dB is as high as 20dB while linear gain is >16dB. The TriQuint T1G4003532-FS uses a 32V supply and only 150mA of current. Overall efficiency is up to 70%. The –FS flangeless package offers low thermal resistance and is easily soldered down. Also available is a flanged package in the T1G4003532-FL. Both TriQuint transistors are ideal for military and civilian radar, jammers and communications systems where high gain and high efficiency are required.

The T1G4003532-FS is available from stock at RFMW, Ltd.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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