RFMW Supports 120W GaN Transistors from TriQuint Semiconductor

TriQuint T1G4012036-FL 120W GaN TransistorRFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration. Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36V supply. Linear gain is as high as 15dB. Both packages offer low thermal resistance and the RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation. Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication systems and jammers.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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