RFMW to Support 10W GaN Transistor from TriQuint Semiconductor

TriQuint T1G6001032-SM 10W GaN TransistorRFMW, Ltd. announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10W peak (P3dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process.  Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology, the T1G6001032-SM is rated from DC to 6GHz. Mid-band linear gain is >17dB with over 50% efficiency. Operating at 32V with only 50mA of quiescent drain current, the T1G6001032-SM finds applications in commercial and military radar, communication transceivers, avionics and wideband amplifier designs. TriQuint packages this unmatched transistor in a ceramic, 5x5mm QFN for minimal thermal resistance and ease of use.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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