RFMW offers GaN CMOS Power Switch

XSYSTOR 365CT000 40A pulsed switch for GaN controller circuitsRFMW, Ltd. announces design and sales support for the 365CT000, 40A pulsed switch from XSYSTOR, Inc.  The 365CT000 offers easy integration of GaN amplifiers in high speed, pulsed power systems. These CMOS, complementary MOSFET switches have clocked speeds of <200nSec for rise and fall times. Allowing source and drain voltages from 28 to 80V, the XSYSTOR switch is compatible with standard and high voltage GaN amplifiers and transistors. Operating temperature is specified for -40 to 85 degrees C but will withstand 175 degrees C with derated voltage and current capacity. The 365CT000 is offered in a small, 23x27mm, castellated SMT package allowing it to be placed on or near the voltage supply line’s RF choke. XSYSTOR also offers inverting and non-inverting voltage controllers and sequencers for GaN implementations.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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