RFMW, Ltd. announces design and sales support for Qorvo’s QPD1010 GaN on SiC, 10W transistor housed in a 3x3mm plastic QFN and operational from DC to 4GHz. Serving radar, mil comm, avionics, jammers and wideband amplifier applications, the QPD1010 offers a combination of high gain, high efficiency, low cost and small size making it an ideal unmatched transistor. Operating from bias voltages of 28-50V, power added efficiencies are as high as 70%. Small signal gain is rated at 25dB.
RFMW’s 4GHz GaN on SiC Transistor provides 10W Psat
By RFMW