RFMW’s 4GHz GaN on SiC Transistor provides 10W Psat

Qorvo QPD1010 15W GaN transistor from DC to 4GHz offered in 3x3mm QFN packageRFMW, Ltd. announces design and sales support for Qorvo’s QPD1010 GaN on SiC, 10W transistor housed in a 3x3mm plastic QFN and operational from DC to 4GHz. Serving radar, mil comm, avionics, jammers and wideband amplifier applications, the QPD1010 offers a combination of high gain, high efficiency, low cost and small size making it an ideal unmatched transistor. Operating from bias voltages of 28-50V, power added efficiencies are as high as 70%. Small signal gain is rated at 25dB.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

Related Posts

Leave a Reply