2.6GHz Transistor with 360W output from RFMW

Qorvo QPD2795 GaN power transistor with 360W P3dB from 2.5 to 2.7GHz RFMW LtdRFMW, Ltd. announces design and sales support for a high efficiency, high power transistor from Qorvo. The Qorvo QPD2795 GaN power transistor has a P3dB of 360W for Band 7 and Band 41 wireless communications infrastructure and microcell designs in the 2.5 to 2.7GHz frequency range. Offering typical drain efficiency of 72% and linear gain of 22dB, the QPD2795 draws 700mA from a 48V supply.  Qorvo packages this transistor in an eared, ceramic, air cavity package.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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