RFMW, Ltd. announces design and sales support for an asymmetric Doherty power device from Qorvo. The QPD2731 is a next-generation GaN on SiC solution featuring two transistors in a single package to maximize linearity, efficiency and gain, and ultimately reduce operating costs in macro base stations. Providing a peak Doherty output power of 316W, the QPD2731 can deliver 50W average power at 48V operation for applications in the 2.5 to 2.7GHz frequency range. Doherty gain is 16dB and Doherty drain efficiency is 60% at an average power of 47.5dBm. This RoHS compliant device is offered in a 4-lead, earless, ceramic flange package.