65V RF Power Transistor Enables Higher Power Density

NXP MRFX1K80H transistor with 1800 watts of CW output power in the 1.8 to 470MHz range utilizing a 65V supplyRFMW, Ltd. announces design and sales support for NXP’s MRFX1K80H transistor. The MRFX1K80H is capable of 1800 watts of CW output power in circuits operating in the 1.8 to 470MHz range. Utilizing a 65V supply, this transistor is designed for ease-of-use with unmatched RF input and output ports and can be used either single-ended or in a push-pull configuration. The higher voltage enables higher power density thereby reducing the number of transistors in high power applications such as plasma etching, RF ablation, industrial heating, FM/DAB radio broadcast and aerospace. Higher voltage also allows increased output power while retaining reasonable output impedance and a reduction of current loss in the system. Drain efficiency is >80% while gain is in the low to mid 20dB region depending on frequency and application. Capable of usage either CW or pulsed, this rugged LDMOS transistor can withstand VSWR >65:1 at all phase angles.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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