RFMW, Ltd. announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Power Doubler RF amplifier IC. Qorvo’s model QPB8857 provides over 28 dB of flat gain and low noise of 4.5 dB for DOCSIS 3.1 amplifiers, head-end CMTS equipment and broadband CATV hybrid modules from 47 to 1218 MHz. Using a single 24V supply, the QPB8857 offers low noise and low distortion at high efficiency, consuming only 10.5W in a 5x7mm, QFN package. With CSO of -68 dBc and CTB of -75 dBc, this IC supports an adjustable bias and easy integration with a return loss of 18 dB.