Detector Diodes Support 5G Applications

Keysight Technologies beam lead detector diode HSCH-9161 for zero bias detector circuits in 5G transceiver applications through W–band (110 GHz)RFMW, Ltd. announces design and sales support for a GaAs detector diode from Keysight Technologies. Available as a discrete, beam lead, the HSCH-9161 detector diode offers low junction capacitance of 0.035 pF and an fc >200 GHz making it ideal for medium-low barrier, zero bias detector circuits in 5G transceiver applications. Functional through W–band (110 GHz), the HSCH-9161 can be mounted in microstrip, finline, and coplanar circuits providing a small footprint in hybrid circuit designs. GaAs provides a lower temperature coefficient than silicon while maintaining durability. This Keysight detector diode has a maximum power handling capability of 20 dBm.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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