High Gain GaN Transistor supports Radar and Infrastructure

RFMW announces design and sales support for a high gain, GaN transistor with excellent efficiency. The Qorvo QPD0050 spans DC to 3.6 GHz with 75 Watts of P3dB output power and maximum drain efficiency of 78%. Linear gain is 22 dB and efficiency-tuned P3dB gain is 19.4 dB. Designed for 48 V operation, the QPD0050 serves military & commercial radar, land mobile radio communications and test instrumentation. The device can be used in Doherty architecture for the final stage of small cells, microcells, and active antenna systems or, as a driver in a macrocell base station amplifier. Offered in a plastic overmold, SMT package.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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