Dual-Path Transistor supports Symmetric Doherty

Qorvo’s QPD0405 2 x 20W dual-path, GaN transistor operates from 4.4 to 5.0 GHz.


RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0405 houses two transistors in a 7 x 6.5 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 4.4 to 5.0 GHz. Applicable for symmetric Doherty designs in 5G Massive MIMO BTS, it can deliver P3dB power of 21.9 Watts at +48 V operation. Device gain is 13.7 dB. The QPD0405 also supports active antennas and may be used as micro and macro, base station drivers.

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John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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