Dual-Path Transistor supports Symmetric Doherty

RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0405 houses two transistors in a 7 x 6.5 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 4.4 to 5.0 GHz. Applicable for symmetric Doherty designs in 5G Massive MIMO BTS, it can deliver P3dB power of 21.9 Watts at +48 V operation. Device gain is 13.7 dB. The QPD0405 also supports active antennas and may be used as micro and macro, base station drivers.