Dual-Path Transistor supports Symmetric Doherty

Qorvo’s QPD0405 2 x 20W dual-path, GaN transistor operates from 4.4 to 5.0 GHz.

 

RFMW announces design and sales support for a dual-path, GaN transistor. Supporting 20 Watt or 40 Watt designs, Qorvo’s QPD0405 houses two transistors in a 7 x 6.5 mm plastic package. This dual-path discrete GaN on SiC HEMT, single-stage power transistor operates from 4.4 to 5.0 GHz. Applicable for symmetric Doherty designs in 5G Massive MIMO BTS, it can deliver P3dB power of 21.9 Watts at +48 V operation. Device gain is 13.7 dB. The QPD0405 also supports active antennas and may be used as micro and macro, base station drivers.


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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

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