Broadband RF Power GaN HEMT

The Ampleon CLF3H0060-30U is a 30 Watt, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed applications from DC to 6.0 GHz

RFMW announces design and sales support for a GaN Transistor from Ampleon. The CLF3H0060-30U is a 30 Watt, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz. The device utilizes a thermally enhanced package with low thermal resistance providing excellent ruggedness. Designed for broadband operation, the CLF3H0060-30U features high efficiency. Large signal models in ADS and MWO are available for this RoHS compliant device.


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About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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