750W GaN on SiC RF Transistor

Posted On 10 Mar 2022

Tag: high power GaN transistor, L-band radar transistor, Qorvo, QPD1028L

The Qorvo QPD1028L delivers >750 W of saturated power from 1.2 to 1.4 GHz for military and civilian L-Band radar systems.

RFMW announces design and sales support for a high power GaN transistor from Qorvo. The QPD1028L delivers >750 W of saturated power from 1.2 to 1.4 GHz for military and civilian L-Band radar systems. Efficiency at Psat is 67 to 70% with 17 to 18 dB of gain. The QPD1028L is capable of CW or pulsed operation with 65 volt bias. This input-pre-matched device is housed in an industry standard air cavity package.

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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.