750W GaN on SiC RF Transistor
Posted On 10 Mar 2022
RFMW announces design and sales support for a high power GaN transistor from Qorvo. The QPD1028L delivers >750 W of saturated power from 1.2 to 1.4 GHz for military and civilian L-Band radar systems. Efficiency at Psat is 67 to 70% with 17 to 18 dB of gain. The QPD1028L is capable of CW or pulsed operation with 65 volt bias. This input-pre-matched device is housed in an industry standard air cavity package.