DC-20 GHz, 250 Micron Discrete GaAs pHEMT

The Qorvo QPD2025D typically provides 24 dBm of output power with gain of 14 dB and 58% power-added efficiency at 1 dB compression

RFMW announces design and sales support for a discrete 250-Micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression making it appropriate for high efficiency applications. Bias voltage is 8 volts for broadband wireless, aerospace and defense applications.


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RFMW is the premier pure play technical distributor of RF & Microwave semiconductors, connectors, and components for our customers and suppliers by providing component, value add, and design solutions through a focused technical sales and marketing organization.

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