DC-20 GHz, 400 Micron Discrete GaAs pHEMT Die
Posted On 07 Apr 2022
RFMW announces design and sales support for a discrete 400 Micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression making it appropriate for high efficiency applications. Bias voltage is 8 volts for broadband wireless, aerospace and defense applications.