RFMW, Ltd. announces immediate availability for Carlisle Interconnect Technologies WMP series of sub-miniature, blind-mate interconnect solutions. The WMP series is ideal for complex, high performance microwave modules and systems where the use of a light weight connector is a primary issue. The WMP series feature set makes them a perfect solution in military radios, radars, space, and test applications. The blind-mate, push-on interface design facilitates rapid assembly and testing while enabling dense connector configurations in microwave modules. Available bullet sizes allow PCB stack height of <0.120”. The ability to tolerate radial and axial misalignment allows for multiple engagement/disengagement cycles without…
Author: RFMW
RFMW, Ltd. announces design and sales support for Skyworks SE2432L, a high performance, fully integrated RF Front End Module designed for ZigBee/Smart Energy applications. The Skyworks SE2432L FEM offers fully matched input baluns, interstage matching, a harmonic filter, and digital controls compatible with 1.6 – 3.6 V CMOS levels. Capable of operating over a wide supply voltage range from 2.0 to 3.6V, the SE2432L can be used in battery powered applications such as in-home appliances and “smart” thermostats. ON/OFF time is < 800 nsec and the SE2432L is housed in a 3x4x0.9mm Skyworks Green package.
RFMD has announced the introduction of the world’s first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. RFMD is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market. According to industry analysts the GaN microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28%. This market growth comes from both military (radar, electronic warfare, communications) and commercial (power management, cellular, CATV, land mobile…
RFMW, Ltd. announces design and sales support for a 60W power amplifier from TriQuint Semiconductor intended for X-band commercial and military radar applications in the 9 to 10GHz range. The TGA2313-FL provides 13dB of gain from a 24V supply drawing 2.4A. A 10-lead, bold-down flange package with CuW-base provides superior thermal management. In addition, TriQuint’s GaN on SiC substrate provides reliable high power operation. TGA2313-FL I/O ports are matched to 50 ohms.PAE is 38%.
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s 2.5W amplifier module for small cell applications. The TGA2450-SM provides 3 gain stages offering overall gain of 35dB. The final stage integrates a Doherty design allowing peak power up to 18W. Operating from 2110 to 2170MHz, TriQuint’s TGA2450-SM has >20MHz signal bandwidth in a 50 ohm, input/output matched 20x20mm SMT package. Independent gain stages are powered with +18 and +5V supplies. 35% efficiency highlights this HBT device.
RFMW, Ltd. announces design and sales support for the T1G6001032-SM, a ceramic packaged, 10W peak (P3dB) power transistor fabricated using TriQuint Semiconductor’s proven Gallium Nitride (GaN) production process. Offering a broad instantaneous bandwidth afforded from TriQuint’s TQGaN25 process technology, the T1G6001032-SM is rated from DC to 6GHz. Mid-band linear gain is >17dB with over 50% efficiency. Operating at 32V with only 50mA of quiescent drain current, the T1G6001032-SM finds applications in commercial and military radar, communication transceivers, avionics and wideband amplifier designs. TriQuint packages this unmatched transistor in a ceramic, 5x5mm QFN for minimal thermal resistance and ease of use.
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGA2578, a 30W GaN power amplifier covering 2-6GHz. The TriQuint TGA2578 offers 27dB small signal gain while maintaining 40% power added efficiency (PAE). System designers benefit from reduced combining in circuit paths and the resulting improved efficiencies. The TGA2578 is produced using TriQuint’s TQGaN25 process offering 28V operation at 400mA. Available as 6.4x5x0.1mm DIE, the TGA2578 fully matched to 50 ohms with integrated DC blocking caps on the I/O ports. The TGA2578 is ITAR controlled and applicable for electronic warfare, EMC amplifiers and test instrumentation.
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor wideband GaN on SiC transistors. The TriQuint T1G4012036-FL is a 120 W peak (24 W avg.) (P3dB) discrete transistor in a flange package while the TriQuint T1G4012036-FS provides an earless configuration. Both devices operate from DC to 3.5 GHz and offer > 50% drain efficiency from a 36V supply. Linear gain is as high as 15dB. Both packages offer low thermal resistance and the RF inputs of the T1G4012036-FL and T1G4012036-FS are pre-matched for S-Band operation. Applications for the T1G4012036 include wideband or narrowband amplifiers, civilian and military radar, communication…
RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s integrated limiter/LNA multi-chip module TGM2543-SM. The TriQuint TGM2543-SM is targeted at the Radar market where 4-20GHz frequency coverage in a surface mount package offers cost and performance benefits. Covering multiple Radar bands, the TGM2543-SM limiter can handle 4W CW input power while the LNA provides 17dB of gain with an average noise figure of 2dB. The TriQuint TGM2543-SM integrated limiter/LNA is available in a 7x7mm, hermetic, surface mount package.
RFMW, Ltd. announces design and sales support for a small profile, high power termination from EMC Technology. The SMT252503ALN2F covers frequencies to 4GHz with VSWR < 1.2:1 (1.13:1 <2.7GHz). Employing an Aluminum Nitride substrate, the SMT252503ALN2F handles up to 150W. Alumina or Beryllium Oxide substrates are also available. Supporting applications such as base stations, remote radio heads, combiners and isolators, the EMC Technology SMT252503ALN2F competitive advantage is it’s power-to-size ratio. Measuring 0.245×0.245×0.041 inches, EMC’s surface mount SMT252503ALN2F is one of the smallest terminations to boast this power handling capacity. Nominal impedance is 50 ohms with a maximum temperature coefficient of…