RFMW announces design and sales support for a high-power transistor from Ampleon. The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. Offering up to 31 dB of gain and typical drain efficiency of >72%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators. High breakdown voltage enables class E operation up to 50 volts VDS while the ART150FEU is qualified up to a maximum VDS of 65 V. The device is characterized from 30 to 65 volts. Integrated dual-sided ESD protection enables class…
Author: RFMW
RFMW announces design and sales support for a beamforming IC from Renesas. The F6513S is an 8-channel, transmit, active beamforming, RFIC designed for application in Ku-Band (14.4 to 17.3 GHz) planar phased array antennas for communications or radar applications. The IC has a single common RF input port and eight output channels. The eight independently controlled output channels can drive eight single-polarized elements or four dual-polarized elements of an electronically scanned array (ESA). Each channel has 6-bits of digital phase control covering 360° and 25 dB of gain control with a minimum step size of 0.2 dB, enabling precise beam…
RFMW announces design and sales support for a wideband, high power, MMIC amplifier from Qorvo. The QPA1003D operates from 1 to 8 GHz and typically provides 10W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50 Ω with integrated DC blocking capacitors on both RF I/O ports, simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as,…
RFMW announces design and sales support for a high power amplifier module from Elite RF. The MB1.08.0G404828 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 10 Watts of saturated power from 1.0 to 8.0 GHz with a P1dB of 4 Watts. Biased class AB, the amplifier provides 48 dB of gain and works in CW or pulsed mode to support applications including Electronic Warfare (EW), commercial and military radar, jammers, SATCOM, mobile infrastructure, scientific, medical and laboratory use. The MB1.08.0G404828 can be used in narrowband and multi-octave bandwidth applications and comes with an industry-leading, 5-year warranty.
RFMW announces design and sales support for a GaN Transistor from Ampleon. The CLF3H0035-100U is a 100 Watt, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 3.5 GHz. The device utilizes a thermally enhanced package with low thermal resistance providing excellent ruggedness. Designed for broadband operation, the CLF3H0035-100U features high efficiency. Large signal models in ADS and MWO are available for this RoHS compliant device.
1. What made you select Qorvo’s QPA0004 and QPA0007 as your top product picks? Qorvo’s QPA0004 and QPA0007 are unique to the market. They differentiate from other products in their category in the value they offer. Their chip-level design allows circuit elements to be switched in/out of networks and results in an optimized amplifier that can operate in different frequency bands. Both products are electronically reconfigurable with control signals applications. 2. What are key features/specifications of Qorvo’s QPA0004 and QPA0007? One of the top key features of the QPA0007 and the QPA0004 is their new reconfigurable technology that enables next-generation…
RFMW announces design and sales support for a high power Front-End Module (FEM) from Qorvo. The Qorvo QPF4288A features +22 dBm MCS11 HE40 -43 dB dynamic EVM and +27 dBm MC20 VHT20 spectral mask compliance for wireless access points. Noise figure is 1.9 dB with 14 dB receive gain and 5 dB bypass loss. The QPF4288A delivers high capacity and high efficiency in a 5×3 mm package with integrated matching to minimize layout area.
RFMW announces design and sales support for a positive slope gain block from CML Microcircuits. The CMX90G301 is a low-power, 50 Ω cascadable MMIC gain block for 1.4 to 7.1 GHz applications. +1 dB of positive gain-slope across the band eliminates the need for equalization and compensates for increasing system losses with frequency. Highly integrated, the CMX90G301 minimizes component count and board area. RF ports are matched to 50 Ω with DC-blocking capacitors. An active bias circuit allows the device to operate over a wide supply voltage of 2.7 to 5V with typical current of 20 mA. GaAs pHEMT fabrication…
RFMW announces design and sales support for a GaN Transistor from Ampleon. The CLF3H0060-30U is a 30 Watt, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz. The device utilizes a thermally enhanced package with low thermal resistance providing excellent ruggedness. Designed for broadband operation, the CLF3H0060-30U features high efficiency. Large signal models in ADS and MWO are available for this RoHS compliant device.
RFMW today announced a global distribution agreement with Menlo Microsystems, Inc. (Menlo Micro), known for reinventing the electronic switch with its Ideal Switch™ technology. Under the agreement, RFMW becomes a franchised distributor for worldwide marketing and sales of Menlo Micro products derived from their Ideal Switch™ technology, including RF and general-purpose switches, RF subsystems and power relays. RFMW is a specialized distributor providing customers and suppliers with focused distribution of RF and microwave components as well as specialized component-engineering support. “The exponential growth of Menlo Micro around the world requires a channel partner who recognizes the value of demand-creation, as…