RFMW, Ltd. announces design and sales support for MAST Technologies microwave and millimeter wave absorbing materials for automobile collision avoidance, adaptive cruise control, back-up warning and lane detection systems. Tunable to solve a variety of high frequency EMI issues, MAST absorber material is available in sheets up to 24×24 inches and can be fitted with a pressure sensitive, adhesive backing. For more information, contact an RFMW specialist in your local area with your requirements.
Author: RFMW
RFMW, Ltd. announces design and sales support for a 1500W CW (1700W pulsed) RF power transistor from Ampleon. The BLF189XRA spans a frequency range of 30 to 500MHz for broadcast and industrial applications such as CO2, plasma RF, and VHF radio. Offering gain of 26.5dB in CW operation, efficiency is 75%. Excellent ruggedness is a hall mark of Ampleon high power LDMOS and the BLF189XRA can withstand VSWR mismatch as high as 65:1. Excellent thermal stability is enhanced by the flanged, balanced ceramic packaging.
RFMW, Ltd. announces participation at the 2017 ANGACOM show in Cologne, Germany. ANGA Com is Europe’s largest and most important Exhibition and Congress for Broadband, Cable & Satellite technology. The event provides a broadband focused market place for network operators, vendors and content providers from all over Europe. The venue at Congress-Centrum Koelmesse features 27,000 square feet of exhibition space. RFMW Europe will exhibit at booth K31, Hall 8. Scheduled for 30 May – 1 June 2017, additional show information can be found on the ANGACOM web site at www.angacom.com.de.
RFMW, Ltd. announces design and sales support for a 5GHz front end module (FEM). The Qorvo RFFM4555 integrates a low noise amplifier (LNA) with a SPDT switch for 802.11a/n/ac applications in the 4.9 to 5.925GHz frequency range. LNA gain is 13dB and offers a bypass mode with 6dB loss characteristics. Transmit to antenna path loss is only 0.6dB. Applicable for customer premise equipment (CPE), set-top box (STB), access points, picocells and femtocells, the RFFM4555 can handle up to 33dBm at the TX input. With a 1.5×1.5mm footprint, this FEM minimizes PCB usage.
RFMW, Ltd. announces design and sales support for the TGF2929-HM from Qorvo. This hermetic packaged power transistor offers 100W of power from DC to 3.5GHz and up to 132W Psat at 2GHz. With 72% power added efficiency, the TGF2929-HM runs from a 28V supply buss. Small signal gain is as much as 17.4dB. Prematched for S-band, the transistor’s hermitic package offers low thermal resistance and lends itself to applications such as space based radar and satellite communications.
RFMW, Ltd. announces design and sales support for a high efficiency, high power transistor from Qorvo. The Qorvo QPD2795 GaN power transistor has a P3dB of 360W for Band 7 and Band 41 wireless communications infrastructure and microcell designs in the 2.5 to 2.7GHz frequency range. Offering typical drain efficiency of 72% and linear gain of 22dB, the QPD2795 draws 700mA from a 48V supply. Qorvo packages this transistor in an eared, ceramic, air cavity package.
RFMW, Ltd. announces design and sales support for an integrated power amplifier module from Qorvo. The RFPA5562 spans 4.9 to 5.925GHz for 802.11a/n/ac Customer Premise Equipment (CPE), access points, enterprise routers, set-top-boxes, picocell and femtocell applications. With 33dB of typical gain, the RFPA5562 offers high throughput across the power spectrum and best-in-class power added efficiencies. An integrated power detector enables next-gen power calibration while low power consumption (295mA @ 5V) provides better thermal management. Offered in a 4x4mm QFN package.
RFMW, Ltd. announces design and sales support for a plastic packaged Low Noise Amplifier. The Qorvo QPA2626 utilizes GaAs technology to achieve a noise figure of 1.3dB for this 17 to 22GHz LNA. Small signal gain is 25dB while P1dB is 20dBm. Drawing 90mA from a 3.5V bias supply, the QPA2626 is ideal for receiver applications in satellite and point to point communication systems.
RFMW, Ltd. announces design and sales support for Qorvo’s QPD1010 GaN on SiC, 10W transistor housed in a 3x3mm plastic QFN and operational from DC to 4GHz. Serving radar, mil comm, avionics, jammers and wideband amplifier applications, the QPD1010 offers a combination of high gain, high efficiency, low cost and small size making it an ideal unmatched transistor. Operating from bias voltages of 28-50V, power added efficiencies are as high as 70%. Small signal gain is rated at 25dB.
RFMW, Ltd. reports successful participation at the 2017 Texas Symposium on Wireless & Microwave Circuits & Systems held in Waco, TX on March 30-31. “As a show sponsor and exhibitor, we found this symposium very valuable” said JoAnn Chun, Regional Sales Engineer from RFMW, Ltd. “With over 100 attendees, we saw a lot of interest for products such as RF cable assemblies and test components. Local companies such as Raytheon and BAE were in attendance as well as Baylor University students and professors.” 2017 marks the 4th year for this annual event. RFMW, Ltd. is proud to be a show…