What made you feature the Qorvo 1200V SiC Power Modules? How does these products differ from others and what value do they offer?
Qorvo’s first SiC module products are housed in an industry standard easy-to-use E1B package. The modules utilize a unique cascode architecture that pairs a high performance normally-on SiC JFET with a cascode optimized low voltage, low RDS(on) Si MOSFET, producing a normally off device with reduced conduction and switching losses for maximized efficiency. The silicon-like gate drive characteristics allows for the use of standard unipolar gate drive levels compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices thus minimizing redesign efforts.
The 1200V modules are available in both half-bridge and full-bridge topologies and exhibit ultra-low gate charge (Qg), exceptional reverse recovery (Qrr) and low body diode forward voltage (VFSD) making them ideal for switching inductive loads and applications requiring standard gate drive. The modules are constructed using advanced Ag sintering die attach technology and direct bond copper ceramic (DBC) bottom layer for isolation and superior thermal performance.
What are the key features/specifications of the Qorvo 1200V SiC Power Modules?
Key Features: Half-Bridge Modules
UHB50SC12E1BC3N / UHB100SC12E1BC3N
- Voltage: 1200V
- RDS(on) / Current: 9.4mΩ / 100A or 19mΩ / 50A
- Max Operating Temp: 150ᵒ C
- Excellent Reverse Recovery: Qrr = 495nC / 1000nC
- Low Body Diode Voltage: VFSD = 1.2V / 1.4V
- Low Gate Charge: QG = 85nC / 170nC
- Standard Gate Drive
- Threshold Voltage: VG(th) = 5V
- Ag Sintered Die Attach
- Direct Bond Copper Ceramic (DBC) base
Key Features: Full-Bridge Modules
UFB25SC12E1BC3N / UFB15C12E1BC3N
- Voltage: 1200V
- RDS(on) / Current: 70mΩ / 15A or 35mΩ / 25A
- Max Operating Temp: 150ᵒ C
- Excellent Reverse Recovery: Qrr = 140nC / 244nC
- Low Body Diode Voltage: VFSD = 1.4V / 1.4V
- Low Gate Charge: QG = 46nC / 42.5nC
- Standard Gate Drive
- Threshold Voltage: VG(th) = 5V
- Ag Sintered Die Attach
- Direct Bond Copper Ceramic (DBC) base
What are common markets/applications for the Qorvo 1200V SiC Power Modules?
- EV Charging Stations
- PV Inverters
- Energy Storage
- SMPS
About Kirk Barton
Kirk Barton is a Technical Marketing Manager for Power Products at RFMW. Leveraging 35 years of industry experience and a degree in Electrical Engineering, Kirk specializes in high power applications using wide bandgap technologies. Kirk enjoys being part of the RF industry’s innovative environment and witnessing the positive impact that technological advances have on integration, efficiency, and end applications.
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