RFMW Introduces Discrete 1600-Micron FET from TriQuint Semiconductor

TriQuint TGF2160 FET
RFMW, Ltd. announces design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the  TGF2160 offers 63% PAE at 8V and 517mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. A
silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. The TriQuint TGF2160 is available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach.
Part 12 GHz DC Gate Die Size
Vds = 8V, Ids = 50% Idss Vds =
2V
P1dB G1dB PAE NF Idss Gm Vp BVgd BVgs Rth
TGF2018 22 14 55 1 58 70 -1.0 -15 -15 88 0.25×180 410×340
TGF2025 24 14 58 0.9 81 97 -1.0 -15 -15 62.5 0.25×180 410×340
TGF2040 26 13 55 1.1 129 155 -1.0 -15 -15 60 0.25×400 410×340
TGF2060 28 12 55 1.4 194 232 -1.0 -15 -15 54 0.25×600 410×340
TGF2080 29.5 11.5 56 259 310 -1.0 -15 -15 33 0.25×800 410×540
TGF2120 31 11 57 388 464 -1.0 -15 -15 31 0.25×1200 410×540

TGF2160
32.5 10.4 63 517 619 -1.0 -15 -15 31 0.25×1600 410×340
About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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