 RFMW, Ltd. announces design and sales support for a discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage. Designed using TriQuint’s proven 0.25um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the TGF2160 offers 63% PAE at 8V and 517mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required. A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. The TriQuint TGF2160 is available in a 0.41 x 0.54 x 0.10mm chip suitable for eutectic die attach. |
| Part | 12 GHz | DC | Gate | Die Size | ||||||||
| Vds = 8V, Ids = 50% Idss | Vds = 2V |
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| P1dB | G1dB | PAE | NF | Idss | Gm | Vp | BVgd | BVgs | Rth | |||
| TGF2018 | 22 | 14 | 55 | 1 | 58 | 70 | -1.0 | -15 | -15 | 88 | 0.25×180 | 410×340 |
| TGF2025 | 24 | 14 | 58 | 0.9 | 81 | 97 | -1.0 | -15 | -15 | 62.5 | 0.25×180 | 410×340 |
| TGF2040 | 26 | 13 | 55 | 1.1 | 129 | 155 | -1.0 | -15 | -15 | 60 | 0.25×400 | 410×340 |
| TGF2060 | 28 | 12 | 55 | 1.4 | 194 | 232 | -1.0 | -15 | -15 | 54 | 0.25×600 | 410×340 |
| TGF2080 | 29.5 | 11.5 | 56 | – | 259 | 310 | -1.0 | -15 | -15 | 33 | 0.25×800 | 410×540 |
| TGF2120 | 31 | 11 | 57 | – | 388 | 464 | -1.0 | -15 | -15 | 31 | 0.25×1200 | 410×540 |
TGF2160 |
32.5 | 10.4 | 63 | – | 517 | 619 | -1.0 | -15 | -15 | 31 | 0.25×1600 | 410×340 |
