High-Gain, 45W, S-band GaN Transistors
Posted On 22 Jul 2014
RFMW, Ltd. announces design and sales support for two new 45W GaN on SiC transistors from TriQuint. The T1G4004532-FL (flanged) and T1G4004532-FS (earless) are wideband, DC to 3.5GHz devices offering 17dB of gain, nearly twice that of competing GaN devices. Both transistors are input matched for S-band operation and both the T1G4004532-FL and T1G4004532-FS operate from a 32V supply. Manufactured on TriQuint’s TQGan25 process, the devices utilize a low thermal resistance base material and are housed in industry standard packaging for use in Radar, EW and general purpose, wideband applications.