RFMW offers 200W Ampleon Transistor

Ampleon’s BLF10M6200, 200W LDMOS power transistor for 700 to 1000MHz ISM applicationsRFMW, Ltd. announces design and sales support for Ampleon’s BLF10M6200, a 200W LDMOS power transistor targeted for ISM applications from 700 to 1000MHz. The BLF10M6200 offers 28.5% typical drain efficiency and is internally matched for ease of use. Ampleon designers integrate internal ESD protection for enhanced reliability. The BLF10M6200 is designed for ruggedness in class-AB operation and capable of withstanding a load mismatch of 10:1 through all phases. With 20dB of gain, this Ampleon transistor draws 1400mA of current from a 28V supply.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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