RFMW, Ltd. announces design and sales support for Ampleon’s BLF10M6200, a 200W LDMOS power transistor targeted for ISM applications from 700 to 1000MHz. The BLF10M6200 offers 28.5% typical drain efficiency and is internally matched for ease of use. Ampleon designers integrate internal ESD protection for enhanced reliability. The BLF10M6200 is designed for ruggedness in class-AB operation and capable of withstanding a load mismatch of 10:1 through all phases. With 20dB of gain, this Ampleon transistor draws 1400mA of current from a 28V supply.