What made you select the Qorvo UJ4N075004L8S SiC JFET as a product to feature? How does this product differentiate from others and what value does it offer?
Qorvo’s UJ4N075004L8S is a high-performance Gen 4 normally-on SiC JFET transistor with a voltage rating of 750 V and an ultra-low on resistance of 4.3 mOhm. Housed in a compact TOLL package, this device is designed to meet the demanding thermal and space requirements of solid-state circuit breakers and relay applications. Its robust technology ensures reliable high-energy switching, making it ideal for circuit protection applications.
Additional 750V and 1200V options will be announced soon as well.
What are the key features/specifications of the UJ4N075004L8S SiC JFET?
Key features of the UJ4N075004L8S SiC JFET include:
- VDS = 750V
- RDS(on) = 4.3mΩ
- Compact TOLL SMD Package
- Operating temperature: -55°C to 175°C
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- Short circuit rated
- RoHS compliant
What are common markets/applications?
- Solid State / Semiconductor Circuit Breaker
- Solid State / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
Support Information
Qorvo’s silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors ranging from 650 to 1700 V, featuring ultra-low on-resistance (RDS(on)) starting at just 4 mΩ. Their low gate charge (QG) minimizes conduction and switching losses, making them ideal for circuit protection applications. The following video explores the challenges of SSCBs and demonstrates how these devices overcome them:
About Kirk Barton
Kirk Barton is a Technical Marketing Manager for Power Products at RFMW. Leveraging 35 years of industry experience and a degree in Electrical Engineering, Kirk specializes in high power applications using wide bandgap technologies. Kirk enjoys being part of the RF industry’s innovative environment and witnessing the positive impact that technological advances have on integration, efficiency, and end applications.
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