GaN Transistor Offers 73% PAE from RFMW

Qorvo TGF3021-SM 4GHz GaN transistor offers 30W with 73% PAE. 32VRFMW, Ltd. announces design and sales support for the Qorvo TGF3021-SM GaN transistor offering over 30 Watts of P3dB output power. Functioning from 30MHz to 4GHz, the TGF3021-SM is a discrete GaN on SiC HEMT supporting multiple high power applications such as LMR radio, commercial and military radar, RF jammers and test instrumentation. Capable of both CW and pulsed performance, typical PAE is 72.7%. The Qorvo TGF3021-SM operates from a 32 volt supply and is offered in a 3x4mm plastic QFN package.  Mid-band linear gain, when tuned for power, is >19dB.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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