X-band GaN Transistor from RFMW provides 25 Watts

Qorvo TGF2979-SM provides 25W of saturated power from 8 to 12GHzRFMW, Ltd. announces design and sales support for a plastic GaN transistor from Qorvo. The TGF2979-SM provides 25W of saturated power from 8 to 12GHz for various applications including marine and weather radar, military radar and avionics. Operational to very low frequency, the recommended bias voltage is 32V. The TGF2979-SM provides >45% PAE and small signal gain of >11dB at mid X-band frequencies. Offered in a low cost, low thermal resistance, plastic, QFN package measuring 3x4mm, this transistor is capable of supporting CW and pulse operation.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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