RFMW, Ltd. announces design and sales support for a plastic GaN transistor from Qorvo. The TGF2979-SM provides 25W of saturated power from 8 to 12GHz for various applications including marine and weather radar, military radar and avionics. Operational to very low frequency, the recommended bias voltage is 32V. The TGF2979-SM provides >45% PAE and small signal gain of >11dB at mid X-band frequencies. Offered in a low cost, low thermal resistance, plastic, QFN package measuring 3x4mm, this transistor is capable of supporting CW and pulse operation.
X-band GaN Transistor from RFMW provides 25 Watts
By RFMW