RFMW, Ltd. announces design and sales support for a Qorvo GaN on SiC transistor serving radar, mil comm, avionics, jammers and wideband amplifier applications. The QPD1009 is a 15W transistor housed in a 3x3mm plastic QFN and operational from DC to 4GHz. Operating from bias voltages of 28-50V, power added efficiencies are as high as 72%. Small signal gain is rated at 24dB. This combination of high gain, high efficiency, low cost and small size make the QPD1009 an ideal unmatched transistor.