15W GaN Transistor from RFMW spans 4GHz

Qorvo QPD1009 15W GaN transistor from DC to 4GHz offered in 3x3mm QFN packageRFMW, Ltd. announces design and sales support for a Qorvo GaN on SiC transistor serving radar, mil comm, avionics, jammers and wideband amplifier applications. The QPD1009 is a 15W transistor housed in a 3x3mm plastic QFN and operational from DC to 4GHz. Operating from bias voltages of 28-50V, power added efficiencies are as high as 72%. Small signal gain is rated at 24dB. This combination of high gain, high efficiency, low cost and small size make the QPD1009 an ideal unmatched transistor.

About the Author
John Hamilton has over 40 years of experience in RF and Microwave technology, applications, technical support and marketing. He is the Vice President of Marketing at RFMW, holds multiple degrees and has a background in Test & Measurement.

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